Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodes
author
Ziko, Mehadi Hasan
Koel, Ants
Rang, Toomas
Toompuu, Jana
statement of authorship
Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Jana Toompuu
source
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
location of publication
Zürich
publisher
Trans Tech Publications
year of publication
2020
pages
p. 960-972
series
Materials science forum ; 1004
conference name, date
18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019
conference location
Kyoto, Japan
url
https://doi.org/10.4028/www.scientific.net/MSF.1004.960
subject term
ränikarbiid
keevitus
Schottky barjäär
simulatsioon
elektrilised omadused
spektroskoopia
Scopus
Conference proceedings at Scopus
Article at Scopus
kvartiil
Q3
category (general)
Engineering
en
Tehnika
et
Materials science
en
Materjaliteadus
et
Physics and astronomy
en
Füüsika ja astronoomia
et
category (sub)
Engineering. Mechanical engineering
en
Tehnika. Masinaehitus
et
Materials science. General materials science
en
Materjaliteadus. Üldine materjaliteadus
et
Engineering. Mechanics of materials
en
Tehnika. Materjalide mehaanika
et
Physics and astronomy. Condensed matter physics
en
Füüsika ja astronoomia. Kondenseeritud aine füüsika
et
keyword
4H-SiC
diffusion welding
DLTS
inhomogeneity
SBD
TCAD
ISSN
1662-9752
notes
Bibliogr.: 44 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise
Uurimisrühm
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics