Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodes

author
Ziko, Mehadi Hasan
Koel, Ants
Rang, Toomas
Toompuu, Jana
statement of authorship
Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Jana Toompuu
source
Silicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Materials science forum
location of publication
Zürich
publisher
Trans Tech Publications
year of publication
2020
pages
p. 960-972
series
Materials science forum ; 1004
conference name, date
18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019
conference location
Kyoto, Japan
url
https://doi.org/10.4028/www.scientific.net/MSF.1004.960
subject term
ränikarbiid
keevitus
Schottky barjäär
simulatsioon
elektrilised omadused
spektroskoopia
Scopus
https://www.scopus.com/sourceid/28700
https://www.scopus.com/record/display.uri?eid=2-s2.0-85089802997&origin=inward&txGid=d9ea1cc1bb56f121c6b9ca0d87873517
quartile
Q3
category (general)
Engineering
Tehnika
Materials science
Materjaliteadus
Physics and astronomy
Füüsika ja astronoomia
category (sub)
Engineering. Mechanical engineering
Tehnika. Masinaehitus
Materials science. General materials science
Materjaliteadus. Üldine materjaliteadus
Engineering. Mechanics of materials
Tehnika. Materjalide mehaanika
Physics and astronomy. Condensed matter physics
Füüsika ja astronoomia. Kondenseeritud aine füüsika
keyword
4H-SiC
diffusion welding
DLTS
inhomogeneity
SBD
TCAD
ISSN
1662-9752
ISBN
9783035715798
notes
Bibliogr.: 44 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise
Reserch Group
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics