Abashkina, S., Rimshans, J., Korolkov, V., Tabarov, T.

full record print

Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate

author

Abashkina, S.

Rimshans, J.

Korolkov, V.I.

Tabarov, T.

statement of authorship

Abashkina S., Rimshans J. and Korolkov V., Tabarov T

source

Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University

location of publication

Tallinn

year of publication

1992

pages

p. 83-88: ill

notes

Bibl. 3 ref

review

Kokkuvõte: Vertikaalse foto-väljatransistori siirdekarakteristikute numbriline modelleerimine koos tüürahela takistuse arvestamisega

language

inglise

Märksõnad ja võtmesõnad

subject term

transistorid

siirdeprotsessid

mahtuvus (elektrotehnika)

elektritakistus

arvutusmeetodid

Abashkina, S., Rimshans, J., Korolkov, V., Tabarov, T. Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate // Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University. Tallinn, 1992. p. 83-88: ill.