Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes
author
Rashid, Muhammad Haroon
Koel, Ants
Rang, Toomas
statement of authorship
Muhammad Haroon Rashid, Ants Koel, Toomas Rang
source
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
Materials science forum
location of publication
Zürich
publisher
Trans Tech Publications
year of publication
2020
pages
p. 490-496
series
Materials science forum ; 1004
conference name, date
18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019
conference location
Kyoto, Japan
url
https://doi.org/10.4028/www.scientific.net/MSF.1004.490
subject term
germaanium
ränikarbiid
keevitus
karbiidid
Scopus
https://www.scopus.com/sourceid/28700
https://www.scopus.com/record/display.uri?eid=2-s2.0-85089810011&origin=inward&txGid=62ac56cc823cce52f96865de6b58557f
quartile
Q3
category (general)
Engineering
Tehnika
Materials science
Materjaliteadus
Physics and astronomy
Füüsika ja astronoomia
category (sub)
Engineering. Mechanical engineering
Tehnika. Masinaehitus
Materials science. General materials science
Materjaliteadus. Üldine materjaliteadus
Engineering. Mechanics of materials
Tehnika. Materjalide mehaanika
Physics and astronomy. Condensed matter physics
Füüsika ja astronoomia. Kondenseeritud aine füüsika
keyword
3C-SiC
4H-SiC
diffusion bonding
germanium
heterostructures
silicon carbide (SiC)
ISSN
1662-9752
notes
Bibliogr.: 16 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise
Reserch Group
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics