Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons

statement of authorship
O.M. Korolkov, V.V. Kozlovski, A.A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang
journal volume number month
vol. 53, 7
year of publication
pages
p. 975−978
ISSN
1063-7826
notes
Bibliogr.: 14 ref
scientific publication
teaduspublikatsioon
classifier
1.1
quartile
Q2
language
inglise