Operation of Single-Chip MOSFET and IGBT Devices after failure due to repetitive avalanche [Electronic resource]
author
Blinov, Andrei
Norrga, Staffan
Tibola, Gabriel
statement of authorship
Andrei Blinov, Staffan Norrga and Gabriel Tibola
source
EPE'15 ECCE Europe : 8-10 September 2015, Geneva, Switzerland : 17th European Conference on Power Electronics and Applications
location of publication
[S.l.]
publisher
CERN
year of publication
2015
pages
p. 1-9 : ill. [USB]
conference name, date
17th European Conference on Power Electronics and Applications, EPE 2015 ECCE Europe, 8-10 September, 2015
conference location
Geneva, Switzerland
url
http://dx.doi.org/10.1109/EPE.2015.7309190
subject term
elektrimuundurid
pooljuhtseadised
rikked
töökindlus
keyword
MOSFET
IGBT
breakdown
fault tolerance
device characterisation
power semiconductor device
reliability
ISBN
9789075815238
notes
Bibliogr.: 7 ref
CERN = European Organization for Nuclear Research
TalTech department
elektrotehnika instituut
language
inglise