Simulations of wide bandgap SiC N-N heterostructure diode
heading
Patankar, U.S., Koel, A., Pardy, T.
statement of authorship
Udayan S Patankar, Ants Koel, Tamás Pardy
source
2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020
location of publication
Danvers
publisher
year of publication
pages
4 p
conference name, date
2020 IEEE International Conference on Consumer Electronics (ICCE), 4-6 Jan. 2020
conference location
Las Vegas, NV, USA
subject term
keyword
carrier mobility
III-V semiconductors
semiconductor diodes
semiconductor heterojunctions
silicon compounds
technology CAD (electronics)
ISSN
2158-4001
ISBN
978-7281-5186
notes
Bibliogr.: 24 ref
availibility
ei leidu TTÜ Raamatukogus
TTÜ department
TTÜ department code
ie
country
us
language
inglise
report field
aasta2020i
editor's notes
PMi 210121
Patankar, U.S., Koel, A., Pardy, T. Simulations of wide bandgap SiC N-N heterostructure diode // 2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020. Danvers : IEEE, 2020. 4 p.