Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
author
statement of authorship
D.Kropman, E.Mellikov, A.Öpik, K.Lott, O.Volobujeva, T.Kärner, I.Heinmaa, T.Laas, A.Medvid
source
Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008
location of publication
Kaunas
publisher
year of publication
pages
p. 204-207
language
inglise
Kropman, D., Mellikov, E., Öpik, A., Lott, K., Volobujeva, O., Kärner, T., Heinmaa, I., Laas, T., Medvid, A. Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties // Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008. Kaunas : Technologija, 2008. p. 204-207.