Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects
author
Velmre, Enn
Udal, Andres
Masszi, F.
Nordlander, E.
statement of authorship
E.Velmre, A.Udal, F.Masszi and E.Nordlander
source
Simulation of semiconductor devices and processes. Vol. 6
location of publication
Wien
publisher
Springer
year of publication
1995
pages
p. 340-343: ill
url
https://link.springer.com/chapter/10.1007/978-3-7091-6619-2_83
subject term
ränikarbiid
dioodid
struktuur
simulatsioon
materjalid
anisotroopia
keyword
Diode Structure
Conductivity Anisotropy
Bottom Contact
Field Penetration Depth
Mobility Anisotropy
ISBN
978-3-7091-6619-2 (Online)
978-3-7091-7363-3
notes
Bibl.: 7 ref
language
inglise