Simulation of advanced super-speed BiCMOS static memory cells based on the reverse base current effect of avalanche transistors

author
statement of authorship
A.Bubennikov, A.Zykov
location of publication
[Tallinn]
year of publication
pages
p. 63-66: ill
ISBN
9985-59-081-3
notes
Bibl. 2 ref
language
inglise