Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes

author
Rashid, Muhammad Haroon
Koel, Ants
Rang, Toomas
statement of authorship
Muhammad Haroon Rashid, Ants Koel, Toomas Rang
source
Silicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
location of publication
Zurich
publisher
Trans Tech Publications
year of publication
2019
pages
p. 357–361
series
Materials science forum ; 963
url
https://doi.org/10.4028/www.scientific.net/MSF.963.357
subject term
ränikarbiid
elektrilised omadused
keevitus
Scopus
Conference proceeding at Scopus
Article at Scopus
kvartiil
Q4
category (general)
Engineering en
Tehnika et
Materials science en
Materjaliteadus et
Physics and astronomy en
Füüsika ja astronoomia et
category (sub)
Engineering. Mechanical engineering en
Tehnika. Masinaehitus et
Materials science. General materials science en
Materjaliteadus. Üldine materjaliteadus et
Engineering. Mechanics of materials en
Tehnika. Materjalide mehaanika et
Physics and astronomy. Condensed matter physics en
Füüsika ja astronoomia. Kondenseeritud aine füüsika et
keyword
3C-SiC
4H-SiC
diffusion welding
diode
direct bonding
heterojunction
silicon
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 10 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise
Uurimisrühm
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics