Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
author
Lebedev, Alexander A.
Davydovskaja, K. S.
Kozlovski, Vitali V.
Korolkov, Oleg
Sleptšuk, Natalja
Toompuu, Jana
statement of authorship
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O.M. Korolkov, N.S. Sleptšuk, J. Toompuu
source
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
location of publication
[S.l.]
year of publication
2016
pages
p. 49
conference name, date
11th European Conference on Silicon Carbide and Related Materials ECSCRM 2016, September 25-29, 2016
conference location
Halkidiki, Greece
subject term
Schottky barjäär
dioodid
ränikarbiid
keyword
Schottky diodes
silicon carbide (SiC)
radiation effects
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise