High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
statement of authorship
Oleg Korolkov, Natalja Sleptsuk, Paul Annus, Raul Land, Toomas Rang
source
Silicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
location of publication
Pfaffikon
publisher
year of publication
pages
p. 790-794 : ill
series
Materials science forum ; 858
conference name, date
16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015
conference location
Giardini Naxos, Naxos
subject term
ISSN
0255-5476
ISBN
978-3-0357-1042-7
notes
Bibliogr.: 5 ref
TTÜ department
language
inglise
Korolkov, O., Sleptšuk, N., Annus, P., Land, R., Rang, T. High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes // Silicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. Pfaffikon : Trans Tech Publications, 2016. p. 790-794 : ill. (Materials science forum ; 858).