Numerical investigation of SiC devices performance considering the incomplecte dopant ionization

statement of authorship
A.Udal, E.Velmre
location of publication
[S.l.]
year of publication
pages
p. 1383-1386
ISBN
0-87849-425-1
notes
(Materials Science Forum ; 527/529)
language
inglise
Udal, A., Velmre, E. Numerical investigation of SiC devices performance considering the incomplecte dopant ionization // Silicon carbide and related materials 2005. [S.l.] : Trans Tech Publications, 2006. p. 1383-1386. https://www.scientific.net/MSF.527-529.1383