Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties
author
Kropman, Daniel
Seeman, Viktor
Dolgov, Sergei
Heinmaa, Ivo
Medvid, Artur
statement of authorship
Daniel Kropman, Viktor Seeman, Sergei Dolgov, Ivo Heinmaa, Artur Medvid
source
Physica Status Solidi (C) Current Topics in Solid State Physics
publisher
WILEY-VCH
journal volume number month
vol. 13, 10-12
year of publication
2016
pages
p. 790 - 792
url
https://doi.org/10.1002/pssc.201600051
subject term
liidesed
oksiidid
räni
pinged (füüsika)
laserkiirgus
keyword
EPR
interface
SEM
Si-SiO2 system
stress relaxation
ISSN
1862-6351
notes
Bibliogr.: 5 ref
scientific publication
teaduspublikatsioon
classifier
1.1
Scopus
https://www.scopus.com/sourceid/4700152710
https://www.scopus.com/record/display.uri?eid=2-s2.0-84992626289&origin=resultslist&sort=plf-f&src=s&sid=cdfc52fb027a72eafe4f96d734f78c62&sot=b&sdt=b&s=DOI%2810.1002%2Fpssc.201600051%29&sl=27&sessionSearchId=cdfc52fb027a72eafe4f96d734f78c62&relpos=0
WOS
https://www.webofscience.com/wos/woscc/full-record/WOS:000399448900017
category (general)
Physics and astronomy
Füüsika ja astronoomia
category (sub)
Physics and astronomy. Condensed matter physics
Füüsika ja astronoomia. Kondenseeritud aine füüsika
quartile
Q3
TalTech department
materjali- ja keskkonnatehnoloogia instituut
language
inglise