Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons
author
Kozlovski, Vitali V.
Korolkov, Oleg
Lebedev, Alexander A.
Toompuu, Jana
Sleptsuk, Natalja
statement of authorship
Vitalii V. Kozlovski, Oleg Korolkov, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk
source
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
location of publication
Zürich
publisher
Trans Tech Publications Ltd.
year of publication
2020
pages
p. 231-236
series
Materials science forum ; 1004
conference name, date
18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, 29 Sept. - 4 Oct. 2019
conference location
Kyoto, Japan
url
https://doi.org/10.4028/www.scientific.net/MSF.1004.231
subject term
teras
spektroskoopia
elektronid
dioodid
prootonid
Scopus
Conference Proceedings at Scopus
Article at Scopus
kvartiil
Q3
category (general)
Engineering
en
Tehnika
et
Materials science
en
Materjaliteadus
et
Physics and astronomy
en
Füüsika ja astronoomia
et
category (sub)
Engineering. Mechanical engineering
en
Tehnika. Masinaehitus
et
Materials science. General materials science
en
Materjaliteadus. Üldine materjaliteadus
et
Engineering. Mechanics of materials
en
Tehnika. Materjalide mehaanika
et
Physics and astronomy. Condensed matter physics
en
Füüsika ja astronoomia. Kondenseeritud aine füüsika
et
keyword
annealing kinetics
DLTS spectra
electron irradiation
JBS diodes
proton irradiation
ISSN
0255-5476
ISBN
978-303571579-8
notes
Bibliogr.: 19ref
scientific publication
teaduspublikatsioon
classifier
3.1
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise