Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
author
Koel, Ants
Rang, Toomas
Rang, Galina
statement of authorship
A. Koel, T. Rang & G. Rang
source
High performance structure and materials. VI
location of publication
Southampton
publisher
WIT Press
year of publication
2012
pages
p. 439-448 : ill
series
WIT transactions on the built environment ; 124
subject term
ränikarbiid
pooljuhtstruktuurid
elektrilised omadused
keevitus
matemaatiline modelleerimine
Schottky barjäär
keyword
silicon carbide
metal semiconductor contacts
diffusion welding
interface layer
deep energy levels
DLTS method
numerical modelling
Schottky diodes
ISSN
1743-3509
ISBN
978-1-84564-596-0
notes
Bibliogr.: 16 ref
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise