Gate and base drivers for silicon carbide power transistors : an overview
statement of authorship
Dimosthenis Peftitsis, and Jacek Rabkowski
journal volume number month
vol. 31, 10
year of publication
pages
p. 7194-7213 : ill
subject term
keyword
base driver
high switching frequency
switching performance
ISSN
0885-8993
notes
Bibliogr.: 175 ref
TTÜ department
language
inglise
Peftitsis, D., Rabkowski, J. Gate and base drivers for silicon carbide power transistors : an overview // IEEE transactions on power electronics (2016) vol. 31, 10, p. 7194-7213 : ill.