Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 system

statement of authorship
D. Kropman, S. Dolgov, P. Onufrijevs, E. Dauksta
source
Gettering and Defect Engineering in Semiconductor Technology XV
location of publication
[S.l.]
year of publication
pages
p. 352-357 : ill
series
Solid state phenomena ; 205-206
conference name, date
15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 22-27 September 2013
conference location
Oxford, UK
quartile
Q3
ISSN
1012-0394
ISBN
978-303785824-0
notes
Bibliogr.: 14 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
language
inglise