Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 system
author
Kropman, Daniel
Dolgov, Sergei
Onufrijevs, Pavels
Dauksta, Edvins
statement of authorship
D. Kropman, S. Dolgov, P. Onufrijevs, E. Dauksta
source
Gettering and Defect Engineering in Semiconductor Technology XV
location of publication
[S.l.]
publisher
Trans Tech Publications
year of publication
2014
pages
p. 352-357 : ill
series
Solid state phenomena ; 205-206
conference name, date
15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013, 22-27 September 2013
conference location
Oxford, UK
url
https://doi.org/10.4028/www.scientific.net/SSP.205-206.352
subject term
struktuur
defektid
liidesed
ultraheli
ravi
Scopus
https://www.scopus.com/sourceid/21100305259
https://www.scopus.com/record/display.uri?eid=2-s2.0-84886782662&origin=inward&txGid=689574b4b5c8f661d063627c2f2df3e1
WOS
https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SOLID%20STATE%20PHENOM&year=2005
https://www.webofscience.com/wos/woscc/full-record/WOS:000336338000051
quartile
Q3
category (general)
Materials science
Materjaliteadus
Physics and astronomy
Füüsika ja astronoomia
category (sub)
Materials science. General materials science
Materjaliteadus. Üldine materjaliteadus
Physics and astronomy. Atomic and molecular physics, and optics
Füüsika ja astronoomia. Aatomi- ja molekulaarfüüsika ning optika
Physics and astronomy. Condensed matter physics
Füüsika ja astronoomia. Kondenseeritud aine füüsika
keyword
defect structure
ESR
interface
ultrasonic treatment
ISSN
1012-0394
ISBN
978-303785824-0
notes
Bibliogr.: 14 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
materjaliteaduse instituut
language
inglise