Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers

author
Pukiene, Simona
Jasinskas, A.
statement of authorship
S Pūkienė, M Karaliūnas, A Jasinskas, E Dudutienė, B Čechavicius, J Devenson, R Butkutė, A Udal and G Valušis
journal volume number month
vol. 30, 45
year of publication
pages
art. 455001, 11 p. : ill
subject term
keyword
GaAsBi
single
multiple
parabolic barriers
carrier localization
AlGaAs
ISSN
0957-4484
notes
Bibliogr.: 44 ref
scientific publication
teaduspublikatsioon
classifier
1.1
kvartiil
Q2
TTÜ department
language
inglise
Pūkienė, S., Karaliūnas, M., Jasinskas, A., Udal, A. et al. Enhancement of photoluminescence of GaAsBi quantum wells by parabolic design of AlGaAs barriers // Nanotechnology (2019) vol. 30, 45, art. 455001, 11 p. : ill. https://doi.org/10.1088/1361-6528/ab36f3