Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
author
Lebedev, Alexander A.
Davidovskaja, Klavdia
Kozlovski, Vitali V.
Korolkov, Oleg
Sleptšuk, Natalja
Toompuu, Jana
statement of authorship
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O. Korolkov, N. Sleptsuk, J. Toompuu
source
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
location of publication
Zurich
publisher
Trans Tech Publications
year of publication
2017
pages
p. 447-450 : ill
series
Materials science forum ; 897
conference name, date
11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016
conference location
Halkidiki, Greece
url
https://doi.org/10.4028/www.scientific.net/MSF.897.447
subject term
pooljuhtdioodid
Schottky barjäär
ränikarbiid
kõrgepingeseadised
keevisliited
Scopus
https://www.scopus.com/sourceid/28700
https://www.scopus.com/record/display.uri?eid=2-s2.0-85019977029&origin=inward&txGid=cac2b46fb29177c3805ee39a6870556e
quartile
Q4
category (general)
Engineering
Tehnika
Materials science
Materjaliteadus
Physics and astronomy
Füüsika ja astronoomia
category (sub)
Engineering. Mechanical engineering
Tehnika. Masinaehitus
Engineering. Mechanics of materials
Tehnika. Materjalide mehaanika
Materials science. General materials science
Materjaliteadus. Üldine materjaliteadus
Physics and astronomy. Condensed matter physics
Füüsika ja astronoomia. Kondenseeritud aine füüsika
keyword
SiC
radiation defects
electrons
irradiation
carrier removal rate
reverse recovery time
ISSN
0255-5476
ISBN
978-3-0357-1043-4
notes
Bibliogr.: 11 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise