Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature
author
Lebedev, Alexander A.
Davydovskaya, Klavdya S.
Kozlovski, Vitali V.
Korolkov, Oleg
Sleptsuk, Natalja
Toompuu, Jana
statement of authorship
Alexander A. Lebedev, Klavdya S. Davydovskaya, Vitali V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu
source
Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
location of publication
Zurich
publisher
Trans Tech Publications
year of publication
2019
pages
p. 730-733
series
Materials science forum ; 963
conference name, date
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
conference location
Birmingham, UK
url
https://doi.org/10.4028/www.scientific.net/MSF.963.730
subject term
kiiritus
temperatuur
rikked
kiirgus
prootonid
Scopus
https://www.scopus.com/sourceid/28700
https://www.scopus.com/record/display.uri?eid=2-s2.0-85071835490&origin=inward&txGid=91cce417d6c19402d77698ef09935e92
quartile
Q4
category (general)
Engineering
Tehnika
Materials science
Materjaliteadus
Physics and astronomy
Füüsika ja astronoomia
category (sub)
Engineering. Mechanical engineering
Tehnika. Masinaehitus
Materials science. General materials science
Materjaliteadus. Üldine materjaliteadus
Engineering. Mechanics of materials
Tehnika. Materjalide mehaanika
Physics and astronomy. Condensed matter physics
Füüsika ja astronoomia. Kondenseeritud aine füüsika
keyword
carrier removal rate
DLTS
JBS diodes
proton irradiation
radiation defects
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 7 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise