Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealing
author
Korolkov, Oleg
Kozlovski, Vitali V.
Lebedev, Alexander A.
Toompuu, Jana
Sleptsuk, Natalja
Rang, Toomas
statement of authorship
Oleg Korolkov, Vitali V. Kozlovski, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk and Toomas Rang
source
Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
location of publication
Zurich
publisher
Trans Tech Publications
year of publication
2019
pages
p. 734-737
series
Materials science forum ; 963
conference name, date
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
conference location
Birmingham, UK
url
https://doi.org/10.4028/www.scientific.net/MSF.963.734
subject term
elektronid
dioodid
kiiritus
vedelgaasid
ränikarbiid
Scopus
Conference proceeding at Scopus
Article at Scopus
kvartiil
Q4
category (general)
Engineering
en
Tehnika
et
Materials science
en
Materjaliteadus
et
Physics and astronomy
en
Füüsika ja astronoomia
et
category (sub)
Engineering. Mechanical engineering
en
Tehnika. Masinaehitus
et
Materials science. General materials science
en
Materjaliteadus. Üldine materjaliteadus
et
Engineering. Mechanics of materials
en
Tehnika. Materjalide mehaanika
et
Physics and astronomy. Condensed matter physics
en
Füüsika ja astronoomia. Kondenseeritud aine füüsika
et
keyword
annealing kinetics
DLTS spectra
electron irradiation
JBS diodes
radiation defects
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 9 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise
Uurimisrühm
Cognitronic lab-on-a-chip research group