High temperature electrical conductivity in donor-doped II-VI compounds
statement of authorship
K.Lott, O.Volobujeva, A.Öpik, T.Nirk, L.Türn, and M.Nõges
source
journal volume number month
0
year of publication
pages
2, Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) : Warsaw, Poland, 24-27 July 2002, p. 618-621 : ill
subject term
ISSN
1610-1634
notes
Bibliogr.: 10 ref
language
inglise
Lott, K., Volobujeva, O., Öpik, A., Nirk, T., Türn, L., Nõges, M. High temperature electrical conductivity in donor-doped II-VI compounds // Physica status solidi (c) (2003) 0, 2, Proceedings 10th International Conference on Shallow Level Centers in Semiconductors (SLCS-10) : Warsaw, Poland, 24-27 July 2002, p. 618-621 : ill. https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200306185