Analysis of deep level centers in GaAs pin-diode structures
author
Korolkov, Oleg
Toompuu, Jana
Rang, Toomas
statement of authorship
O. Korolkov, J. Toompuu, T. Rang
source
Elektronika ir elektrotechnika = Electronics and electrical engineering
publisher
Kauno Technologijos Universitetas
journal volume number month
Vol. 19, No. 10
year of publication
2013
pages
[4 p. ] : ill
url
https://doi.org/10.5755/j01.eee.19.10.5903
subject term
pooljuhtseadised
galliumarseniid
pooljuhtdioodid
relaksatsioon (füüsika)
keyword
gallium arsenide
pin-diodes
capacity relaxation method
deep levels
ISSN
1392-1215
2029-5731 (online)
notes
Bibliogr.: 11 ref
Open Access
Open Access
scientific publication
teaduspublikatsioon
classifier
1.1
Scopus
https://www.scopus.com/sourceid/19900193212
https://www.scopus.com/record/display.uri?eid=2-s2.0-84890763964&origin=resultslist&sort=plf-f&src=s&sot=b&sdt=b&s=DOI%2810.5755%2Fj01.eee.19.10.5903%29&sessionSearchId=426c7384f2dd8d6106bcca8e9e61ed2b
WOS
https://jcr.clarivate.com/jcr-jp/journal-profile?journal=ELEKTRON%20ELEKTROTECH&year=2013
https://www.webofscience.com/wos/woscc/full-record/WOS:000330689000022
category (general)
Engineering
Tehnika
category (sub)
Engineering. Electrical and electronic engineering
Tehnika. Elektri- ja elektroonikatehnika
quartile
Q3
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise