Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers

statement of authorship
T.Rang, G.Higelin, R.Kurel
location of publication
[S.l.]
year of publication
pages
p. 1045-1048
language
inglise
Rang, T., Higelin, G., Kurel, R. Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers // Silicon Carbide and Related Materials 2003. [S.l.] : Trans Tech Publications, 2004. p. 1045-1048. https://www.scientific.net/MSF.457-460.1045