Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
statement of authorship
J. Mizsei, O. Korolkov, J. Toompuu, T. Rang
source
The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012
location of publication
St. Petersburg
publisher
year of publication
pages
2 p. : ill
conference name, date
9th European Conference on Silicon Carbide and Related Materials, 2-6 September, 2012
conference location
St. Petersburg, Russia
subject term
notes
Bibliogr.: 5 ref
TTÜ department
language
inglise
Mizsei, J., Korolkov, O., Toompuu, J., Rang, T. Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe // The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012. St. Petersburg : Trans Tech Publications, 2012. 2 p. : ill.