print

Evaluation of low- and high-voltage GaN transistors in soft-switching DC-DC converter

author
Blinov, Andrei
Kosenko, Roman
Chub, Andrii
statement of authorship
Andrei Blinov, Roman Kosenlo, Andrii Chub
source
2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON) : May 29 - June 2, 2017, Kyiv, Ukraine : conference proceedings
location of publication
[S.l.]
publisher
IEEE
year of publication
2017
pages
p. 544-547 : ill
conference name, date
2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON), May 29 - June 2, 2017
conference location
Kyiv, Ukraine
url
https://doi.org/10.1109/UKRCON.2017.8100299
subject term
galliumiühendid
lülitid
elektrimuundurid
energiatõhusus
keyword
Gallium Nitride (GaN)
HEMTs
soft switching
dc-dc power converters
energy efficiency
ISBN
978-1-5090-3006-4
notes
Bibliogr.: 27 ref
TTÜ department
elektroenergeetika ja mehhatroonika instituut
language
inglise
Blinov, A., Kosenko R., Chub, A. Evaluation of low- and high-voltage GaN transistors in soft-switching DC-DC converter // 2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON) : May 29 - June 2, 2017, Kyiv, Ukraine : conference proceedings. [S.l.] : IEEE, 2017. p. 544-547 : ill. https://doi.org/10.1109/UKRCON.2017.8100299