Experimental evaluation of GaN gate injection transistors
author
Rabkowski, Jacek
Barlik, Roman
statement of authorship
Jacek Rabkowski, Roman Barlik
source
Przeglad elektrotechniczny = Electrical review
journal volume number month
Nr. 3
year of publication
2015
pages
p. 9-12 : ill
url
http://dx.doi.org/10.15199/48.2015.03.03
subject term
jõuseadised
galliumiühendid
energiakaod
mõõtmine
keyword
Gallium Nitride (GaN)
Gate Injection Transistor (GIT)
power losses
double-pulse test
ISSN
0033-2097
notes
Bibliogr.: 17 ref
Kokkuvõte poola keeles
TalTech department
elektrotehnika instituut
language
inglise