SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stack
heading
Korolkov, O., Land, R., Toompuu, J., Sleptšuk, N., Rang, T.
statement of authorship
Oleg Korolkov, Raul Land, Jana Toompuu, Natalja Sleptsuk, Toomas Rang
location of publication
Zürich
publisher
year of publication
pages
p. 862–865 : ill
conference name, date
ICSCRM 2017 : Silicon carbide and related materials 2017, September 17-22, 2017
conference location
Washington, DC, USA
subject term
kvartiil
category (general)
category (sub)
keyword
ISSN
0255-5476
ISBN
978-3-0357-1145-5
notes
Bibliogr.: 3 ref
availibility
ei leidu TTÜ Raamatukogus
scientific publication
teaduspublikatsioon
classifier
TTÜ department
TTÜ department code
ie
country
ch
language
inglise
report field
välisp2018
aasta2018i
editor's notes
PMi 150219 Jd
Korolkov, O., Land, R., Toompuu, J., Sleptšuk, N., Rang, T. SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stack // Silicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA. Zürich : Trans Tech Publications, 2018. p. 862–865 : ill. (Materials science forum ; 924).