Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties
author
Kropman, Daniel
Mellikov, Enn
Kärner, Tiit
Laas, Tõnu
Medvid, Arthur
Onufrijevs, Pavels
Dauksta, Edvins
statement of authorship
Daniel Kropman, Enn Mellikov, Tiit Kärner, Tõnu Laas, Arthur Medvid, Pavels Onufrijevs, Edvins Dauksta
source
Solid state phenomena
journal volume number month
Vol. 178/179
year of publication
2011
pages
p. 259-262
url
https://globaljournals.org/GJSFR_Volume17/1-Stresses-Relaxation-Mechanism.pdf
subject term
räniühendid
liidesed
pinged (füüsika)
relaksatsioon (füüsika)
elektroni paramagnetresonantsspektroskoopia
keyword
EPR
point defect
Si-SiO2-Si3N4 interface
stress relaxation
ISSN
1012-0394
language
inglise