A three-level voltage-source gate driver for SiC MOSFETs in synchronous rectification mode
author
Giannakis, Andreas
Philipps, Daniel
Blinov, Andrei
Peftitsis, Dimosthenis
statement of authorship
Andreas Giannakis, Daniel A. Philipps, Andrei Blinov, Dimosthenis Peftitsis
source
2023 IEEE 17th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)
publisher
IEEE
year of publication
2023
pages
6 p
conference name, date
2023 IEEE 17th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), 14-16 June 2023
conference location
Tallinn, Estonia
url
https://doi.org/10.1109/CPE-POWERENG58103.2023.10227462
subject term
pooljuhtseadised
transistorid
ülepinge (elektrotehnika)
keyword
SiC MOSFET
synchronous rectification
overvoltage
gate driver
ISSN
2166-9546
ISBN
979-8-3503-0004-8
notes
Bibliogr.: 15 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
elektroenergeetika ja mehhatroonika instituut
language
inglise
Reserch Group
Power electronics group