Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
author
Kropman, Daniel
Mellikov, Enn
Öpik, Andres
Lott, Kalju
Volobujeva, Olga
Kärner, T.
Heinmaa, I.
Laas, Tõnu
Medvid, A.
statement of authorship
D.Kropman, E.Mellikov, A.Öpik, K.Lott, O.Volobujeva, T.Kärner, I.Heinmaa, T.Laas and A.Medvid
source
Physica B : condensed matter
journal volume number month
404
year of publication
2009
pages
23/24, p. 5153-5155 : ill
url
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
subject term
pinged (füüsika)
räni
ränidioksiid
kiled
oksüdatsioon
elektroni paramagnetresonantsspektroskoopia
ISSN
0921-4526
notes
Bibliogr.: 5 ref
language
inglise