Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypes
author
Rashid, Muhammad Haroon
Koel, Ants
Rang, Toomas
statement of authorship
M. Haroon Rashid, Ants Koel and Toomas Rang
source
Silicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA
location of publication
Zurich
publisher
Trans Tech Publications
year of publication
2018
pages
p. 302-305 : ill
series
Materials science forum ; 924
conference name, date
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017
conference location
Washington, DC, USA
url
https://doi.org/10.4028/www.scientific.net/MSF.924.302
subject term
pooljuhtstruktuurid
karbiidid
ränikarbiid
Scopus
Conference Proceedings at Scopus
Article at Scopus
kvartiil
Q4
category (general)
Engineering
en
Tehnika
et
Materials science
en
Materjaliteadus
et
Physics and astronomy
en
Füüsika ja astronoomia
et
category (sub)
Engineering. Mechanical engineering
en
Tehnika. Masinaehitus
et
Materials science. General materials science
en
Materjaliteadus. Üldine materjaliteadus
et
Engineering. Mechanics of materials
en
Tehnika. Materjalide mehaanika
et
Physics and astronomy. Condensed matter physics
en
Füüsika ja astronoomia. Kondenseeritud aine füüsika
et
keyword
3C-SiC
4H-SiC
6H-SiC
direct bonding
heterostructures
polytype
ISSN
0255-5476
ISBN
978-3-0357-1145-5
notes
Bibliogr.: 11 ref
scientific publication
teaduspublikatsioon
classifier
3.1
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise
Uurimisrühm
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics