A double-emitter silicon differential strain sensitive transistor with an accelerating field in its base
author
Babichev, G.G.
Kozlovskii, S.I.
Romanov, V.A.
Sharan, N.N.
statement of authorship
G.G.Babichev, S.I.Kozlovskii, V.A.Romanov, N.N.Sharan
source
BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings
location of publication
[Tallinn]
year of publication
1998
pages
p. 263-264: ill
subject term
transistorid
räni
elektriväljad
anisotroopia
ISBN
9985-59-081-3
notes
Bibl. 5 ref
language
inglise