Investigation of deep level centers in i- and n-layers of GaAs pin-diodes
author
Toompuu, Jana
Korolkov, Oleg
Sleptšuk, Natalja
Rang, Toomas
statement of authorship
J. Toompuu, O. Korolkov, N. Sleptsuk, and T. Rang
source
BEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia
location of publication
Tallinn
publisher
Tallinn University of Technology
year of publication
2014
pages
p. 25-28 : ill
conference name, date
2014 14th Biennial Baltic Electronics Conference, October 6-8, 2014
conference location
Tallinn University of Technology
subject term
pooljuhtdioodid
Schottky barjäär
galliumarseniid
spektroskoopia
keyword
capacity relaxation method
deep levels
Gallium Arsenide
pin-diodes
ISSN
1736-3705
ISBN
978-9949-23-672-5
notes
Bibliogr.: 8 ref
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise