Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodes
author
Kozlovski, Vitali V.
Korolkov, Oleg
Davydovskaya, Klavdia S.
Lebedev, Alexander A.
Levinshteǐn, Michael E.
Sleptšuk, Natalja
Strel'Chuk, Anatolii M.
Toompuu, Jana
statement of authorship
V. V. Kozlovski, O. Korol’kov, K. S. Davidovskaya, A. A. Lebedev, M. E. Levinshtein, N. Slepchuk, A. M. Strel’chuk and J. Toompuu
source
Technical Physics Letter
publisher
Pleiades Publishing
journal volume number month
Vol. 46, 3
year of publication
2020
pages
p. 287 - 289
url
https://doi.org/10.1134/S1063785020030244
subject term
prootonid
kiiritus
dioodid
ränikarbiid
keyword
proton irradiation
radiation defects
Schottky diode
silicon carbide
ISSN
1063-7850
notes
Bibliogr.: 16 ref
scientific publication
teaduspublikatsioon
classifier
1.1
Scopus
Journal metrics at Scopus
Article at Scopus
WOS
Journal metrics at WOS
Article at WOS
category (general)
Physics and astronomy
en
Füüsika ja astronoomia
et
category (sub)
Physics and astronomy. Physics and astronomy (miscellaneous)
en
Füüsika ja astronoomia. Füüsika ja astronoomia (mitmesugused)
et
kvartiil
Q3
TTÜ department
Thomas Johann Seebecki elektroonikainstituut
language
inglise