Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p
+
-pin-n
+
structures and result of analysis
author
Toompuu, Jana
Sleptšuk, Natalja
Korolkov, Oleg
Rang, Toomas
statement of authorship
J. Toompuu, N. Sleptsuk, O. Korolkov, T. Rang
source
BEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia
location of publication
Tallinn
publisher
Tallinn University of Technology
year of publication
2016
pages
p. 35-38 : ill
conference name, date
BEC 2016 : 15th Biennial Baltic Electronics Conference, October 3-5, 2016
conference location
Tallinn, Tallinn University of Technology
url
http://www.ester.ee/record=b2150914*est
subject term
pooljuhtdioodid
galliumarseniid
pooljuhtide tehnoloogia
keyword
capacity relaxation method
deep levels
gallium arsenide
pin-diodes
ISBN
978-1-5090-1392-0
notes
Bibliogr.: 6 ref
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise