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Analysis of deep level centers in GaAs pin-diode structuresKorolkov, Oleg; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2013 / [4 p. ] : ill

journal article

Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill

book article

Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p⁺-pin-n⁺ structures and result of analysisToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 35-38 : ill http://www.ester.ee/record=b2150914*est

book article

Spectral properties of incoherent terahertz torch based on parabolic Ga(As,Bi)/AlGaAs quantum wellsKaraliunas, Mindaugas; Pagalys, Justas; Jakštas, Vytautas; Norkus, Ričardas; Urbanowicz, Andrzej; Devenson, Jan; Devenson, Renata; Udal, Andres; Valušis, GintarasTerahertz Emitters, Receivers, and Applications X : SPIE Optical Engineering + Applacations, 11-15 August 2019, San Diego, California, United States : proceedings SPIE digital library2019 https://doi.org/10.1117/12.2528428 Conference proceeding at Scopus Article at Scopus Article at WOS

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gallium arsenide (keyword)

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