Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laserMedvid, A.; Onufrijevs, Pavels; Mellikov, Enn; Kropman, Daniel; Muktepavela, F.; Bakradze, G.Journal of non-crystalline solids2007 / p. 703-707 : ill https://www.sciencedirect.com/science/article/pii/S0022309306014116

Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Laas, Tõnu; Medvid, Arthur; Onufrijevs, Pavels; Dauksta, EdvinsSolid state phenomena2011 / p. 259-262

Understanding and control of stress at Si-SiO2 interfaceKropman, Daniel; Seeman, Viktor; Medvids, Arturs; Onufrijevs, Pavels; Vitusevich, Svetlana; Mikli, ValdekKey engineering materials2020 / p. 291−296 https://doi.org/10.4028/www.scientific.net/KEM.850.291 Journal metrics at Scopus Article at Scopus