Atomic absorption photometry of excess Zn in ZnOLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Grebennik, A.; Vishnjakov, A.Physica status solidi (c) : proceedings2005 / 3, p. 1200-1205 : ill https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200460662

Atomic absorption photometry of excess Zn in ZnOLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Gorohova, E.; Grebennik, A.; Vishnjakov, A.E-MRS Fall Meeting 2004. Symposium F2004 / [1] p

Excess Zn in ZnOLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Gorohova, E.; Grebennik, A.; Vishnjakov, A.International Conference on Photoresponsive Materials : Port Elizabeth, South Africa, 2004 : book of abstracts2004

Excess Zn in ZnOLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Gorohova, E.; Grebennik, A.; Vishnjakov, A.Physica status solidi (c)2004 / 9, p. 2237-2242 : ill

High temperature antistructure disorder in undoped ZnSLott, Kalju; Šinkarenko, Svetlana; Türn, Leo; Nirk, Tiit; Öpik, Andres; Kallavus, Urve; Gorokhova, Elena; Grebennik, A.; Vishnjakov, A.Physica B : condensed matter2009 / 23/24, p. 5006-5008 : ill https://www.sciencedirect.com/science/article/pii/S0921452609009910

High temperature defect equilibrium in ZnS:Cu single crystalsLott, Kalju; Šinkarenko, Svetlana; Türn, Leo; Nirk, Tiit; Öpik, Andres; Kallavus, Urve; Gorokhova, Elena; Grebennik, A.; Vishnjakov, A.Physica status solidi (b)2010 / 7, p. 1662-1665

High temperature electrical conductivity in ZnS:Al and in CdSe:AlLott, Kalju; Nirk, Tiit; Šinkarenko, SvetlanaSolid state ionics2004 / p. 83-87 : ill https://www.sciencedirect.com/science/article/pii/S0167273804005119

High temperature electrical conductivity in ZnS:Al and in CdSe:AlLott, Kalju; Nirk, Tiit; Šinkarenko, SvetlanaE-MRS Spring Meeting 2004 : May 24-28, 2004. Symposium K, Solid state ionics : high temperature vs. low temperature defect chemistry2004 / p. [14]

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressureLott, Kalju; Šinkarenko, Svetlana; Volobujeva, Olga; Türn, Leo; Nirk, Tiit; Öpik, Andres; Nisumaa, Reet; Kallavus, Urve; Nõges, M.; Mikli, Valdek; Viljus, Mart; Gorokhova, Elena; Ananjeva, G.; Grebennik, A.; Vishnjakov, A.Physica status solidi (b)2007 / 5, p. 1623-1626 https://www.researchgate.net/publication/238892320_High_temperature_electrical_conductivity_in_ZnSeIn_and_in_CdSeIn_under_selenium_vapor_pressure

High temperature investigation of ZnS:Ga and CdSe:GaLott, Kalju; Nirk, Tiit; Volobujeva, Olga; Šinkarenko, Svetlana; Türn, Leo; Kallavus, Urve; Grebennik, A.; Vishnjakov, A.Physica B2006 / Proceedings of the 23rd International Conference on Defects in Semiconductors : ICDS-23 : held in Awaji Island, Japan, 24-29 July, 2005. p. 764-766 : ill https://www.sciencedirect.com/science/article/pii/S0921452605015796

High temperature investigation of ZnS:Ga and CdSe:GaLott, Kalju; Nirk, Tiit; Volobujeva, Olga; Šinkarenko, Svetlana; Grebennik, A.; Vishnjakov, A.The 23rd International Conference on Defects in Semiconductors : ICDS-23 : Awaji island, Japan, July 24 - July 29, 2005 : program and abstracts2005 / p. 210 : ill

In-doping of II-VI compounds [Electronic resource]Lott, Kalju; Šinkarenko, Svetlana; Volobujeva, Olga; Türn, Leo; Nirk, Tiit; Nisumaa, Reet; Nõges, M.; Kallavus, UrveVII международная конференция Прикладная оптика : 2006, 16-20 октября, Санкт-Петербург2006 / [5] p. : ill. [CD-ROM]

Zinc nonstoichiometry in ZnOLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Gorohova, E.; Grebennik, A.; Vishnjakov, A.Solid state ionics2004 / p. 29-33 : ill

Zinc non-stoichiometry in ZnOLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Gorohova, E.; Grebennik, A.; Vishnjakov, A.E-MRS Spring Meeting 2004 : May 24-28, 2004. Symposium K, Solid state ionics : high temperature vs. low temperature defect chemistry2004 / p. [14]

Нестехиометрия оксида цинкаLott, Kalju; Šinkarenko, Svetlana; Kirsanova, T.; Türn, Leo; Gorohova, E.; Grebennik, A.; Vishnjakov, A.VI международная конференция "Прикладная оптика" : сборник трудов. Том 2, Оптические технологии и материалы : 18-21 октября 2004 года, Санкт-Петербург, Россия2004 / с. 7-11 : ил