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Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 system (title)

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book article EST / book article ENG

Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Dolgov, Sergei; Onufrijevs, Pavels; Dauksta, EdvinsGettering and Defect Engineering in Semiconductor Technology XV2014 / p. 352-357 : ill https://doi.org/10.4028/www.scientific.net/SSP.205-206.352 Conference proceedings at Scopus Article at Scopus Conference proceedings at WOS Article at WOS

book article EST / book article ENG

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