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Simulation of advanced super-speed BiCMOS static memory cells based on the reverse base current effect of avalanche transistors (title)

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Simulation of advanced super-speed BiCMOS static memory cells based on the reverse base current effect of avalanche transistorsBubennikov, Alexander; Zykov, A.BEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 63-66: ill

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