• Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071874502&origin=inward&txGid=a726a88a134fd68a3198db192e8c9ce6
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• Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 https://www.scopus.com/sourceid/12311 https://www.scopus.com/record/display.uri?eid=2-s2.0-85084000026&origin=resultslist&sort=plf-f&src=s&sid=12bb2cb298eaa413a39b1dd321135230&sot=b&sdt=b&s=TITLE-ABS-KEY%28%22influence+of+the+proton%22%29&sl=35&sessionSearchId=12bb2cb298eaa413a39b1dd321135230&relpos=4 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=TECH%20PHYS%20LETT%2B&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000529352900023