Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Semiconductors
2019
/
p. 975−978
https://doi.org/10.1134/S1063782619070133
https://www.scopus.com/sourceid/29834
https://www.scopus.com/record/display.uri?eid=2-s2.0-85068585613&origin=inward&txGid=3377015e7d50ef7770bff2c1af848b0e
https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SEMICONDUCTORS%2B&year=2022
https://www.webofscience.com/wos/woscc/full-record/WOS:000474481600021