• A model of grain boundary scattering in polycrystalline doped semiconductorsMakletsov, A.; Rimshans, J.BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 529-531: ill https://www.ester.ee/record=b2150914*est
• Monotonous difference scheme for energy flow continuity equation taking into account capacity of Lorentz forceRimshans, J.BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 539-544 https://www.ester.ee/record=b2150914*est
• Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gateAbashkina, S.; Rimshans, J.; Korolkov, V.I.; Tabarov, T.Automation, simulation & measurement : 3rd biennal conference : Tallinn, Estonia, October 7-11, 1991. Section S, Simulation = Automatiseerimine, modelleerimine ja mõõtmine : 3. rahvusvaheline konverents / Tallinna Tehnikaülikool1992 / p. 83-88: ill https://www.ester.ee/record=b1064031*est
• Phase transition in twincomponent classic plasmaMadzhulis, I.; Skryl, J.; Rimshans, J.BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 533-538: ill https://www.ester.ee/record=b2150914*est