full record print

Simulations of wide bandgap SiC N-N heterostructure diode

author
statement of authorship
Udayan S Patankar, Ants Koel, Tamás Pardy
source
2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020
location of publication
Danvers
publisher
year of publication
pages
4 p
conference name, date
2020 IEEE International Conference on Consumer Electronics (ICCE), 4-6 Jan. 2020
conference location
Las Vegas, NV, USA
url
ISSN
2158-4001
ISBN
978-7281-5186
notes
Bibliogr.: 24 ref
TalTech department
language
inglise
subject term
keyword
carrier mobility
III-V semiconductors
semiconductor diodes
semiconductor heterojunctions
silicon compounds
technology CAD (electronics)
wide band gap semiconductors
Reserch Group
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics
Patankar, U.S., Koel, A., Pardy, T. Simulations of wide bandgap SiC N-N heterostructure diode // 2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020. Danvers : IEEE, 2020. 4 p. https://doi.org/10.1109/ICCE46568.2020.9043130