High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes

statement of authorship
Oleg Korolkov, Natalja Sleptsuk, Paul Annus, Raul Land, Toomas Rang
source
ICSRM 2015 : program guide
location of publication
[S.l.]
publisher
Consiglio Nazionale delle Ricerche
year of publication
pages
p. 73
conference name, date
16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015
conference location
Giardini Naxos, Italy
language
inglise
Korolkov, O., Sleptšuk, N., Annus, P., Land, R., Rang, T. High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes // ICSRM 2015 : program guide. [S.l.] : Consiglio Nazionale delle Ricerche, 2015. p. 73.