High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
statement of authorship
Oleg Korolkov, Natalja Sleptsuk, Paul Annus, Raul Land, Toomas Rang
source
ICSRM 2015 : program guide
location of publication
[S.l.]
publisher
Consiglio Nazionale delle Ricerche
year of publication
pages
p. 73
conference name, date
16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015
conference location
Giardini Naxos, Italy
subject term
TTÜ department
language
inglise
Korolkov, O., Sleptšuk, N., Annus, P., Land, R., Rang, T. High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes // ICSRM 2015 : program guide. [S.l.] : Consiglio Nazionale delle Ricerche, 2015. p. 73.