Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
statement of authorship
J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli and T. Rang
source
Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation
location of publication
Durnten-Zurich
publisher
year of publication
pages
p. 677-680 : ill
series
Materials science forum ; 740-742
conference name, date
9th European Conference on Silicon Carbide and Related Materials, 2-6 September, 2012
conference location
St. Petersburg, Russian Federation
ISSN
0255-5476
ISBN
978-3-03785-624-6
notes
Bibliogr.: 4 ref
language
inglise
subject term
keyword
Mizsei, J., Korolkov, O., Toompuu, J., Mikli, V., Rang, T. Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe // Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation. Durnten-Zurich : Trans Tech Publications, 2013. p. 677-680 : ill. (Materials science forum ; 740-742).