Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Abru, Uno; Medvid, A.Solid state phenomena2008 / p. 345-350 https://www.scientific.net/SSP.131-133.345 Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnThin solid films2004 / 1/2, p. 53-57 : ill https://www.sciencedirect.com/science/article/abs/pii/S0921510704003459 Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, Enn; Kauk, MaritMaterials science and engineering : B2004 / p. 295-298 : ill https://www.sciencedirect.com/science/article/abs/pii/S0921510704003459 Kas III kvartali majanduskasv valmistas teile pettumuse? : [Äripäeva küsitlusele vastavad Uno Abru, Priit Kivi, Jaak Leimann ja Veikko Maripuu]Leimann, Jaak; Abru, Uno; Kivi, Priit; Maripuu, VeikkoÄripäev1999 / 7. dets., lk. 31: portr Point defects interaction with extended defects in the Si-SiO2 system [Electronic resource]Kropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnProceedings IVC-16 : Venice, 20042004 / p. SS1-TuP394 [CD-ROM]