A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 395, 2 p

Measurements of charge carrier lifetime temperature dependence in 4H-SiC power diodesVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 394, 2 p